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1

Submicron-gate-length GaAs MESFETs

Jackson, T. N., Van Zeghbroeck, B. J., Pepper, G., DeGelormo, J. F., Keuch, T., Meier, H., Wolf, P.

Journal:

IBM Journal of Research and Development

Year:

1990

Language:

english

File:

PDF, 1.03 MB

english, 1990

2

Microstructure and electrical characteristics of tungsten and WSix contacts to GaAs

D.P. Basile, C.L. Bauer, S. Mahajan, A.G. Milnes, T.N. Jackson, J. DeGelormo

Journal:

Materials Science and Engineering: B

Year:

1991

Language:

english

File:

PDF, 990 KB

english, 1991

3

High-transconductance InGaAs/InAlAs SISFETs

Jackson, T.N., Solomon, P.M., Tischler, M.A., Pettit, G.D., Canora, F.J., DeGelormo, J.F., Bucchignano, J.J., Wind, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 276 KB

english, 1991

4

Gate-self-aligned n-channel and p-channel germanium MOSFETs

Ransom, C.M., Jackson, T.N., DeGelormo, J.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 149 KB

english, 1991

5

[IEEE [1991] 49th Annual Device Research Conference Digest - Boulder, CO (June 17-19, 1991)] [1991] 49th Annual Device Research Conference Digest - Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets

Ransom, C.M., Jackson, T.N., DeGelormo, J.F.

Year:

1991

File:

PDF, 132 KB

1991

6

A new low-voltage Si-compatible electroluminescent device

Robbins, D.J., Falcony, C., DiMaria, D.J., Dong, D.W., DeGelormo, J.F., Chang, I.F., Dove, D.B.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 485 KB

english, 1982

7

[IEEE [1991] 49th Annual Device Research Conference Digest - Boulder, CO (June 17-19, 1991)] [1991] 49th Annual Device Research Conference Digest - High-Transconductance Ingaas/Inaias Sisfets

Jackson, T.N., Solomon, P.M., Tischler, M.A., Pettit, G.D., Canora, F.J., DeGelormo, J.F., Bucchignano, J.J., Wind, S.J.

Year:

1991

File:

PDF, 122 KB

1991

8

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Short-gate-length epitaxial-channel, self-aligned GaAs MESFETs with very large k-factor

Jackson, T.N., Pepper, G., DeGelormo, J.F., Kuech, T.F.

Year:

1990

Language:

english

File:

PDF, 307 KB

english, 1990

9

[IEEE [1991] GaAs IC Symposium Technical Digest - Monterey, CA, USA (20-23 Oct. 1991)] [1991] GaAs IC Symposium Technical Digest - High-speed, low-voltage complementary heterostructure FET circuit technology

Kiehl, R.A., Yates, J., Palmateer, L.F., Wright, S.L., Frank, D.J., Jackson, T.N., Degelormo, J.F., Fleischman, A.J.

Year:

1991

File:

PDF, 376 KB

1991

10

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures

Tischler, M.A., Parker, B.D., DeGelormo, J., Jackson, T.N., Cardone, F., Goorsky, M.S.

Year:

1991

Language:

english

File:

PDF, 311 KB

english, 1991

11

[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - High performance refractory gate self-aligned GaAs MESFETs fabricated by arsine ambient rapid thermal annealing

Jackson, T.N., Pepper, G., DeGelormo, J.F.

Year:

1987

Language:

english

File:

PDF, 255 KB

english, 1987

12

Outdiffusion of Magnesium from Mg + implanted GaAs.

Baratte, H., Jackson, T. N., Sadana, D. K., Degelormo, J. F., Scilla, G.J., Cardone, F.

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 367 KB

english, 1988

13

Arsine Ambient Rapid Thermal Annealing

Jackson, T.N., Degelormo, J.F., Pepper, G.

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 358 KB

english, 1988